No 7, Lorong Industri Sungai Lokan 2, Taman Industri Sungai Lokan, 13800 Butterworth, Penang, Malaysia
Φ200μm Monitor PD Chip
P/N: XSJ-10-M-200-01
This top-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure, anode on top and cathode on bottom. Active area size is Φ200μm, and high responsivity in the wavelength region from 980nm to 1620nm. Application in monitoring the optical power output from the back facet of various LD.
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Description
Features
- Planar structure on n+ InP substrate with top anode contact.
- Φ200μm active area.
- High responsibility.
- Low dark current.
- Low operating bias voltage.
- -40℃ to 85℃ operation range.
- Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
- 100% testing and inspection.
- Customized chip dimension is available.
Applications
- Back facet laser power monitoring.
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