Marketing Dept.: Glen Liu
Tel: (+86) 181 8861 1190
Email:ge_liu@phograin.com

Technical Support: Max Xu
Tel: (+86) 181 8861 1183
Email: hu_xu@phograin.com

F4, Building A5, Nanshan i-Park, No.1001, Xueyuan Blvd, Nanshan District, Shenzhen City, Guangdong Prov., China.
Tel: (+86) 755 2371 2706

Building A8, Phoenix Bay Electronic Information Industrial Park, Xuzhou Economic and Technological Development Zone, Jiangsu Prov., China.
Tel: (+86) 516 8325 8257

No 7, Lorong Industri Sungai Lokan 2, Taman Industri Sungai Lokan, 13800 Butterworth, Penang, Malaysia

Φ5000μm Monitor PD Chip

P/N: XSJ-10-M-5000

This top-illuminated InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure, anode on top and cathode on back. Active area size is Φ5000μm, and high responsivity in the wavelength region from 980nm to 1620nm. Application in monitoring the optical power output from the back facet of various LD.

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Description

Features

  1. Planar structure on n+ InP substrate with top anode contact.
  2. Φ5000μm active area.
  3. High responsibility and low dark current.
  4. Low operating bias voltage.
  5. -40℃ to 85℃ operation range.
  6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
  7. 100% testing and inspection.
  8. Customized chip dimension is available. 

Applications

  1. Industrial automatic control.
  2. Science analysis and experiment.
  3. Spaces light detect equipment.
  4. Optical power meter.
  5. Response spectrum testing.

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