No 7, Lorong Industri Sungai Lokan 2, Taman Industri Sungai Lokan, 13800 Butterworth, Penang, Malaysia
Φ300μm Bottom-illuminated Monitor PD Chip
P/N: XSJ-10-M-300-KB
This InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure with anode and cathode on top, incident surface on back. With bottom-illuminated active area size is Φ300μm, and high responsivity in the wavelength region from 980nm to 1620nm.Mainly application in monitoring the optical power.
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Description
Features
- Planar structure on SI InP substrate.
- Bottom-illuminated: Φ300μm active area.
- High responsibility and low dark current.
- Anode and cathode on top, wire bond on front.
- High ESD threshold: >500V.
- -40℃ to 85℃ operation range.
- Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
- 100% testing and inspection.
- Customized chip dimension is available.
Applications
- Monitoring the optical power
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