No 7, Lorong Industri Sungai Lokan 2, Taman Industri Sungai Lokan, 13800 Butterworth, Penang, Malaysia
28Gbps Φ35μm GaAs PIN PD Chip
P/N: XSJ-10-G6-35
This high data rate 25Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ35μm, signal and ground bond pads on top for TO-CAN package wire-bond, application in 20-25 Gbps short-range optical data communication which is at 850nm.
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Description
Features
- Φ35μm active area.
- Low capacitance.
- Low dark current.
- Data rate up to 28Gbps.
- GS bond pad on top.
- Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
- 100% testing and inspection.
Applications
- 25Gigabit Ethernet/Fiber channel.
- 25Gbps AOC (Active Optical Cable) receiver at 850nm.
- 25Gbps VCSEL based parallel optical interconnects.
- 25Gbps SFP+.
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