No 7, Lorong Industri Sungai Lokan 2, Taman Industri Sungai Lokan, 13800 Butterworth, Penang, Malaysia
4X25Gbps Φ38μm 250μm Die Pitch 1X4 Array GaAs PIN PD Chip
P/N: XSJ-10-G6-38H-K4
This high data rate 100 Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 100Gigabit Ethernet and Multi-mode communication etc. The product dimensions are specifically tailored for non-hermetic package.
Please click the button below to make an inquiry.
Description
Features
- Φ38μm active area.
- Low capacitance, Low dark current, High responsibility.
- GS bond pad design.
- Die pitch: 250μm
- 100% testing and inspection.
- Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
- RoHS2.0 (2011/65/EU) compliant.
Applications
- 100G SR4
Please fill out the form below and we will contact you as soon as possible.
