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IR optical Senser Chip

P/N:S1000R

High ESD design, high responsiveness, low dark current, positive illumination type, anode on the front and cathode on the back, round active area size is Ф 1000μ m. It has extremely high responsiveness in the range of 900nm~1700nm and is mainly used for LD backlight detection.

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Description

Features

  1. High electro-static discharge design, high responsibility(900nm~1700nm), low dark current, top illuminated, anode on top and cathode on back.
  2. Φ=1000μm, round active area.
  3. All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE, RoHS2.0 (2011/65/EU) compliant.

Applications

  1. 激光器背光监测

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